PART |
Description |
Maker |
ADP3309 ADP3309ART-27 ADP3309ART-285 ADP3309ART-29 |
anyCAP?/a> 100 mA Low Dropout Linear Regulator anyCAP⑩ 100 mA Low Dropout Linear Regulator anyCAP 100 mA Low Dropout Linear Regulator anyCAP100 mA Low Dropout Linear Regulator anyCAP00 mA时低压差线性稳压器
|
AD[Analog Devices] Analog Devices, Inc.
|
IPD042P03L3G |
OptiMOSTM P3 Power-Transistor
|
Infineon Technologies AG
|
BSZ160N10N3SG |
OptiMOSTM 3 Power-Transistor
|
Infineon Technologies AG
|
IPD033N06N |
OptiMOSTM Power-Transistor, 60 V
|
Infineon Technologies A...
|
IPB057N06N |
OptiMOSTM Power-Transistor
|
Infineon Technologies A...
|
MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
BSC009NE2LS |
Optimized for e-fuse and ORing application OptiMOSTM Power-MOSFET
|
List of Unclassifed Manufacturers Infineon Technologies A...
|
MRF157 |
MOS LINEAR RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] Motorola, Inc.
|